Researchers at the Fraunhofer Institute for Applied Solid State Physics IAF have developed a gallium nitride (GaN)-based ...
Fraunhofer Institute for Applied Solid State Physics IAF will show a demo of a GaN-based power electronics module for 800 V ...
Researchers at the Fraunhofer Institute for Applied Solid State Physics IAF have developed a gallium nitride-(GaN-)based power electronics module for ...
How can power modules be manufactured to reliably function under increasing power densities, higher temperatures and new ...
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